Description:
2N3055 is a general purpose NPN power transistor manufactured with the epitaxial base process, mounted in a hermetically sealed metal case. The device is designed for general purpose switching and amplifier applications. Like any other transistor The 2N3055 has three pins namely EMITTER, BASE and COLLECTOR.
Application:
audio module
power linear
switching applications
Features:
Transistor Type: NPN
Current collector cutoff: 700Ua
DC Current Gain: 20
Operating Temperature: 200 C
Maximum voltage across collector and emitter: 60V DC
Maximum current allowed trough collector: 15A DC
Maximum voltage across base and emitter: 7V DC
Maximum current allowed through base: 7A DC
Maximum voltage across collector and base: 100V DC
Operating temperature range: -65؛C to +200؛C
Total power dissipation: 115W