Description:
These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
A thermally enhanced large pad lead frame has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (
Application:
motor driver
industrial application
sources
Features:
Ultra Low On-Resistance
N-Channel MOSFET
SOT-23 Footprint
Low Profile (
Available in Tape and Reel
Fast Switching
Lead-Free
RoHS Compliant, Halogen-Free